Infineon IPI80N06S4-07: High-Performance N-Channel MOSFET for Power Management Applications

In the realm of modern electronics, efficient power management is a critical determinant of system performance, reliability, and energy consumption. At the heart of many advanced power conversion and switching circuits lies the power MOSFET. The Infineon IPI80N06S4-07 stands out as a premier N-channel MOSFET engineered to meet the rigorous demands of contemporary power management applications, from switch-mode power supplies (SMPS) to motor control and DC-DC converters.

This MOSFET is constructed using Infineon's advanced OptiMOS™ technology, a hallmark of quality and performance in the semiconductor industry. The core of its superiority lies in its exceptionally low on-state resistance (R DS(on)) of just 7.0 mΩ (max.) at 10 V. This ultra-low resistance is pivotal, as it directly translates to minimized conduction losses during operation. When a MOSFET is in its on-state, a lower R DS(on) means less power is wasted as heat, leading to significantly higher overall system efficiency and cooler operation. This is particularly vital in high-current applications where energy loss can be substantial.

Furthermore, the IPI80N06S4-07 is designed to handle a continuous drain current (I D) of up to 80 A at a case temperature of 25°C, with a robust maximum drain-source voltage (V DS) of 60 V. This combination of high current handling and voltage capability makes it an exceptionally versatile component suitable for a wide array of 12 V to 48 V systems, including automotive applications, server power supplies, and industrial motor drives.

Another significant advantage is its optimized switching performance. The device features low gate charge (Q G) and low reverse recovery charge (Q rr), which are essential parameters for high-frequency switching circuits. These characteristics ensure fast switching speeds and reduced switching losses, enabling designers to push for higher operating frequencies. This, in turn, allows for the use of smaller passive components like inductors and capacitors, contributing to more compact and cost-effective power supply designs.

The component is offered in a TO-220 FullPAK package. This package is renowned for its excellent thermal performance and mechanical robustness. The FullPAK variant features a fully molded plastic body, providing full isolation between the heatsink and the device, thereby simplifying the assembly process and enhancing system safety by eliminating the need for an additional insulation kit.

ICGOO

The Infineon IPI80N06S4-07 is a high-performance N-channel MOSFET that exemplifies the progress in power semiconductor technology. Its defining features—ultra-low R DS(on), high current capability, fast switching characteristics, and a robust isolated package—make it an indispensable component for engineers striving to achieve peak efficiency, power density, and reliability in their power management designs.

Keywords:

1. OptiMOS™ Technology

2. Low R DS(on)

3. High Efficiency

4. Power Management

5. Fast Switching