Infineon IPB037N06N3G 60V OptiMOS Power MOSFET for High-Efficiency Power Conversion

Release date:2025-11-10 Number of clicks:107

Infineon IPB037N06N3G 60V OptiMOS Power MOSFET for High-Efficiency Power Conversion

In the realm of modern power electronics, achieving high efficiency and reliability is paramount. The Infineon IPB037N06N3G, a 60V OptiMOS Power MOSFET, stands out as a premier solution designed to meet these demanding requirements. Engineered with cutting-edge technology, this MOSFET is optimized for a wide range of applications, including DC-DC converters, motor drives, and synchronous rectification in power supplies.

One of the key attributes of the IPB037N06N3G is its exceptionally low on-state resistance (RDS(on)), which is as low as 3.7 mΩ. This minimal resistance significantly reduces conduction losses, leading to higher efficiency and lower heat generation. The device’s superior switching performance further enhances efficiency, making it ideal for high-frequency operations where reducing switching losses is critical.

The MOSFET is housed in a compact and robust DSO-8 (TO-263) package, which offers excellent thermal conductivity and power dissipation capabilities. This allows designers to maximize power density without compromising on thermal management. Additionally, the device’s avalanche ruggedness and high body diode robustness ensure reliable operation under harsh conditions, such as overloads or sudden voltage spikes.

With a gate charge (Qg) optimized for fast switching, the IPB037N06N3G enables designers to achieve higher switching frequencies, which in turn allows for the use of smaller passive components. This not only reduces the overall system size and cost but also improves performance. The MOSFET’s low FOM (Figure of Merit) ensures a perfect balance between conduction and switching losses, making it a top choice for high-efficiency power conversion systems.

ICGOOODFIND: The Infineon IPB037N06N3G 60V OptiMOS Power MOSFET is a high-performance component that delivers outstanding efficiency, thermal management, and reliability for modern power conversion applications.

Keywords:

Power MOSFET, High Efficiency, Low RDS(on), OptiMOS, Thermal Management

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