Infineon IPP04CN10NG: A High-Performance OptiMOS 5 Power MOSFET for Efficient Power Management

Release date:2025-11-05 Number of clicks:137

Infineon IPP04CN10NG: A High-Performance OptiMOS 5 Power MOSFET for Efficient Power Management

In the realm of modern electronics, achieving high efficiency in power management is paramount. The Infineon IPP04CN10NG stands out as a premier solution, engineered to meet the rigorous demands of power conversion systems. As part of Infineon's advanced OptiMOS™ 5 technology family, this power MOSFET is designed to deliver exceptional performance, reliability, and efficiency in a compact package.

The IPP04CN10NG is characterized by its ultra-low on-state resistance (RDS(on)) of just 3.8 mΩ, a benchmark that significantly reduces conduction losses. This attribute is critical for applications where energy efficiency is a top priority, such as in switch-mode power supplies (SMPS), DC-DC converters, and motor control systems. By minimizing power dissipation, the device not only enhances overall system efficiency but also reduces the need for extensive thermal management, leading to more compact and cost-effective designs.

Another standout feature of this MOSFET is its superior switching performance. The OptiMOS 5 technology ensures rapid switching speeds, which are essential for high-frequency operations. This capability allows designers to increase the switching frequency of their power supplies, thereby reducing the size of passive components like inductors and capacitors. The result is a more streamlined and economical bill of materials without compromising on performance.

The device is offered in the space-saving DPAK (TO-252) package, making it an excellent choice for applications with strict board space constraints. Despite its small footprint, the IPP04CN10NG does not sacrifice robustness. It boasts a high maximum drain current (ID) of 100 A and can handle drain-source voltages (VDS) up to 100 V, ensuring reliable operation under heavy load conditions. Furthermore, its enhanced avalanche ruggedness and high body diode robustness contribute to increased system reliability and longevity.

Infineon has also placed a strong emphasis on sustainability. The low power losses directly translate to reduced energy consumption, which is a crucial factor for applications aiming to meet stringent environmental regulations and energy efficiency standards, such as ErP and 80 PLUS certifications for power supplies.

ICGOOFind: The Infineon IPP04CN10NG is a top-tier power MOSFET that encapsulates the innovation of OptiMOS 5 technology. Its combination of ultra-low RDS(on), excellent switching characteristics, and a robust package makes it an indispensable component for designers striving to create the next generation of high-efficiency, compact, and reliable power management systems.

Keywords: OptiMOS 5, Power MOSFET, High Efficiency, Low RDS(on), Power Management

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