Infineon IPD060N03L: High-Performance 60V Logic Level N-Channel MOSFET

In the realm of power electronics, the selection of the right MOSFET is critical for achieving efficiency, reliability, and compact design. The Infineon IPD060N03L stands out as a premier choice, engineered to meet the demanding requirements of modern applications. This 60V logic level N-channel MOSFET leverages Infineon's advanced OptiMOS™ technology, delivering exceptional performance in switching and linear operations.

A key highlight of the IPD060N03L is its low on-state resistance (RDS(on)) of just 6.0 mΩ at 10 V, which minimizes conduction losses and enhances overall efficiency. This makes it particularly suitable for high-current applications such as DC-DC converters, motor control, and power management systems. The device is designed to operate at logic level gate voltages, typically driven directly by 3.3 V or 5 V microcontrollers, eliminating the need for additional gate driver circuits and simplifying design while reducing component count and cost.

The MOSFET’s robust construction ensures high avalanche ruggedness and excellent thermal performance, allowing it to withstand extreme conditions and maintain stability under heavy loads. Its low gate charge (Qg) and fast switching characteristics further contribute to reduced switching losses, making it ideal for high-frequency applications.

Packaged in the space-efficient DPAK (TO-252), the IPD060N03L offers a compact footprint without compromising on power handling capability. This combination of high performance, ease of use, and reliability makes it a go-to component for automotive, industrial, and consumer electronics.

ICGOOODFIND: The Infineon IPD060N03L is a top-tier logic level MOSFET that excels in efficiency, thermal management, and design flexibility, making it a superior choice for advanced power systems.

Keywords:

Logic Level MOSFET, Low RDS(on), OptiMOS™ Technology, High Efficiency, Power Management