Infineon IMW120R020M1HXKSA1: Powering the Next Generation of High-Efficiency Systems

The relentless pursuit of higher efficiency, greater power density, and improved reliability in power electronics is driving the widespread adoption of Wide Bandgap (WBG) semiconductors. Among these, Silicon Carbide (SiC) MOSFETs stand out as a transformative technology, and Infineon's IMW120R020M1HXKSA1 is a prime example of this innovation, engineered to push the boundaries of performance in demanding applications.

This particular device is a 1200V, 20mΩ SiC MOSFET housed in a TO-247 3-pin package. Its remarkably low typical on-state resistance (R DS(on)) of just 20 milliohms is a key metric, directly translating to significantly reduced conduction losses. When combined with the inherent material advantages of SiC—such as faster switching speeds and superior high-temperature operation—this MOSFET enables designers to create systems that are not only more efficient but also smaller and lighter.

The benefits of this low R DS(on) are profound across the entire application spectrum. In solar inverters and energy storage systems, it maximizes energy harvest and minimizes wasted power. For electric vehicle (EV) charging infrastructure and traction inverters, it allows for higher power throughput and faster switching frequencies, which in turn reduces the size and weight of magnetic components like inductors and transformers. In industrial motor drives and switched-mode power supplies (SMPS), it contributes to higher system-level efficiency, reducing cooling requirements and improving reliability.

Beyond the low resistance, the IMW120R020M1HXKSA1 boasts an excellent internal body diode with low reverse recovery charge (Q rr). This characteristic is crucial for minimizing switching losses and preventing potential shoot-through in bridge circuits, further enhancing efficiency and ruggedness. Its high-temperature capability ensures stable performance even in harsh environments where traditional silicon devices would struggle.

ICGOODFIND: The Infineon IMW120R020M1HXKSA1 is a high-performance SiC MOSFET that sets a new benchmark for efficiency and power density. Its ultra-low 20mΩ R DS(on) and fast switching characteristics make it an ideal solution for advanced power conversion systems in renewable energy, e-mobility, and industrial automation, enabling designers to achieve new levels of performance.

Keywords: SiC MOSFET, High-Efficiency, 1200V, Low RDS(on), Power Density