Infineon IPD65R950C6: A 950V CoolMOS™ CFD7 Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronic systems demands semiconductors that push the boundaries of performance. Addressing this need, the Infineon IPD65R950C6 stands out as a premier 950V superjunction MOSFET from the groundbreaking CoolMOS™ CFD7 family. This device is engineered to deliver exceptional efficiency and robustness in a wide array of high-voltage applications.

A key innovation of the CFD7 technology is the integration of a fast body diode, a feature that is paramount for switching applications. The IPD65R950C6 leverages this to achieve ultra-low reverse recovery charge (Qrr). This characteristic is a critical enabler for efficiency, drastically reducing switching losses and enabling higher switching frequencies. The ability to switch faster allows designers to use smaller passive components like inductors and capacitors, directly contributing to increased power density and reduced system size and cost.

Furthermore, the device boasts an exceptionally low effective output capacitance (Coss,eff). This parameter is crucial for achieving high efficiency in quasi-resonant (QR) and critical conduction mode (CrM) flyback converters, which are prevalent in consumer power adapters, industrial power supplies, and LED lighting drivers. The reduced Coss,eff minimizes turn-on losses, a significant loss mechanism at high frequencies, ensuring cooler operation and higher overall system efficiency.

The high voltage rating of 950V provides a significant safety margin for operation from universal input mains (85 – 305 VAC). This robust rating enhances system reliability by offering superior resilience against voltage spikes and transients, commonly encountered in real-world environments. This makes the IPD65R950C6 an ideal choice for demanding applications, including server and telecom SMPS, industrial motor drives, and solar inverters.

Designed with ease of use in mind, the TOLL (TO-leadless) package offers a compact footprint and superior thermal performance. Its low package parasitics ensure that the excellent silicon performance is fully realized in the final application, while its exposed top side allows for efficient heat sinking, enabling higher power throughput.

ICGOOODFIND: The Infineon IPD65R950C6 is a benchmark high-voltage MOSFET that masterfully combines ultra-low switching losses, high robustness, and excellent thermal performance. Its advanced CoolMOS™ CFD7 technology, characterized by the fast body diode and low Coss,eff, makes it a superior component for designers aiming to maximize efficiency and power density in next-generation power conversion systems.

Keywords: CoolMOS™ CFD7, Ultra-low Qrr, High Voltage 950V, High Efficiency, TOLL Package.