Infineon IPB60R180C7ATMA1 CoolMOS™ C7 Power Transistor: Datasheet, Application Notes, and Technical Specifications
The Infineon IPB60R180C7ATMA1 is a state-of-the-art high-voltage power MOSFET belonging to the renowned CoolMOS™ C7 family. This technology represents a significant leap forward in efficiency and power density for a wide range of switched-mode power supplies (SMPS) and other power conversion applications. Engineered with Infineon's superjunction (SJ) concept, this transistor is designed to minimize switching and conduction losses, making it an ideal choice for modern, energy-conscious designs.
Technical Specifications and Key Features
The part number IPB60R180C7ATMA1 provides a detailed description of the device's characteristics:
IPB: Package: TO-263-3 (D2PAK)
60: Voltage Class: 600 V
R180: RDS(on) max of 0.180 Ω
C7: CoolMOS™ C7 Technology
Its core specifications include a maximum drain-source voltage (VDS) of 650 V, ensuring robust operation in off-line applications. A key highlight is its exceptionally low effective output capacitance (Coss,eff) and superior switching performance, which directly translates to reduced switching losses, especially in quasi-resonant (QR) and critical conduction mode (CrM) flyback converters. The device also features a very low gate charge (QG), which simplifies drive requirements and further enhances efficiency.
Datasheet Insights
The official datasheet is the ultimate source of truth for any design engineer. It provides critical information beyond the basic specifications, including:
Absolute Maximum Ratings: The operational boundaries for parameters like voltage, current, and temperature.
Static and Dynamic Electrical Characteristics: Detailed tables and graphs for RDS(on), capacitances (Ciss, Coss, Crss), and switching times.
Safe Operating Area (SOA): Defines the current and voltage limits within which the device can be operated without damage.
Thermal Characteristics: Essential data such as junction-to-ambient and junction-to-case thermal resistance for proper heatsink design.
Application Notes and Typical Use Cases
The IPB60R180C7ATMA1 is engineered for high performance in demanding applications. Key areas include:
Switch-Mode Power Supplies (SMPS): Particularly in server, telecom, and industrial power supplies where high efficiency is paramount.
Power Factor Correction (PFC) Stages: Its fast switching speed and low losses make it suitable for both interleaved and single-stage PFC circuits.
Lighting: High-performance drivers for LED lighting applications.
Solar Inverters: In the auxiliary power supplies within photovoltaic systems.
Infineon provides extensive application notes and design tools to assist engineers. These resources cover topics from PCB layout recommendations for minimizing parasitic inductance to guidance on gate driving techniques that fully leverage the benefits of the C7 technology.
ICGOODFIND: The Infineon IPB60R180C7ATMA1 CoolMOS™ C7 is a benchmark in high-voltage power switching, delivering an exceptional blend of ultra-low losses, high power density, and robust 650 V performance. Its optimized characteristics for high-frequency operation make it a superior component for designers aiming to achieve top-tier efficiency in compact, modern power conversion systems.
Keywords: CoolMOS™ C7, High Voltage MOSFET, Power Efficiency, Switching Losses, SMPS
