Infineon IPL60R360P6S CoolMOS™ P6 600V Power Transistor: Datasheet, Application, and Features
The relentless pursuit of higher efficiency and power density in modern power electronics has driven the evolution of power MOSFET technology. At the forefront of this innovation is Infineon Technologies with its CoolMOS™ family. The IPL60R360P6S, a 600V superjunction (SJ) MOSFET from the CoolMOS™ P6 series, represents a significant leap forward, offering an exceptional blend of high performance, robustness, and ease of use for demanding switching applications.
Key Features and Technological Advanceness
The IPL60R360P6S is engineered with Infineon's latest superjunction technology, which is the cornerstone of its impressive performance metrics. Its most notable feature is its exceptionally low typical on-state resistance (R DS(on)) of just 360 mΩ at a gate-source voltage of 10 V. This low resistance directly translates to reduced conduction losses, enabling higher efficiency and allowing for cooler operation or more compact designs.
Beyond low R DS(on), the CoolMOS™ P6 technology incorporates several groundbreaking features:
Superior Switching Performance: The device exhibits very low gate charge (Q G) and low effective output capacitance (C OSS(eff)), which are critical for minimizing switching losses, especially in high-frequency operations. This allows for faster switching speeds and improved efficiency in circuits like switch-mode power supplies (SMPS).
Enhanced Robustness and Reliability: It features a high avalanche ruggedness and an integrated source-drain diode with excellent reverse recovery characteristics, making it highly resilient against voltage spikes and stressful operating conditions. Furthermore, it offers a wide gate-source voltage range (V GS ± 25 V), providing a greater safety margin against gate oscillations and voltage spikes.
Ease of Design-In: The P6 series is designed to be a drop-in replacement for previous generations and competing devices, simplifying the design process. Its high performance also helps reduce the need for complex cooling systems, lowering the overall system cost.
Primary Applications
The combination of high voltage capability, low losses, and robust performance makes the IPL60R360P6S an ideal choice for a wide array of high-efficiency power conversion systems. Key application areas include:
Switch-Mode Power Supplies (SMPS): Particularly in server, telecom, and industrial power supplies where efficiency standards like 80 Plus Titanium are mandatory.

Power Factor Correction (PFC) Stages: Used in both interleaved and single-stage boost PFC circuits to improve the power factor and overall efficiency of AC-DC converters.
Lighting: High-performance electronic ballasts and LED driver circuits.
Solar Inverters and UPS: In the DC-AC inversion stages where high switching frequency and efficiency are crucial.
Datasheet Overview
The official datasheet for the IPL60R360P6S is the ultimate source of information for design engineers. It provides comprehensive details including:
Absolute Maximum Ratings: Defining the operational boundaries for voltage, current, and temperature.
Electrical Characteristics: Detailed tables and graphs for parameters like R DS(on), capacitance values, switching times, and body diode characteristics.
Thermal Characteristics: Including junction-to-case thermal resistance.
Safe Operating Area (SOA) Graphs: Both for DC and pulsed operation, crucial for reliable design.
Package Information: The device is offered in the industry-standard TO-220 FullPAK package, which features a fully isolated mounting base, simplifying the assembly and thermal management process by not requiring an insulating washer.
ICGOOODFIND: The Infineon IPL60R360P6S CoolMOS™ P6 stands out as a pinnacle of high-voltage MOSFET technology, masterfully balancing ultra-low conduction losses with superior switching performance and unwavering robustness. It is a cornerstone component for engineers aiming to push the boundaries of efficiency and power density in next-generation power electronics, from advanced computing to renewable energy systems.
Keywords: CoolMOS P6, High Efficiency, 600V MOSFET, Low RDS(on), Power Density
